100V N-Channel Enhancement Mode MOSFET.
DMN10H220LE
DMN10H220LE.pdf
DMN10H220LE.pdf
No.13540
FEATURES
? Low On-Resistance
? Low Input Capacitance
? Fast Switching Speed
? Low Input/Output Leakage
DESCRIPTION
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Mechanical Data:
? Case: SOT223
? Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
? Moisture Sensitivity: Level 1 per J-STD-020
? Terminals Connections: See Diagram Below
? Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
? Weight: 0.112 grams (Approximate)
APPLICATION CIRCUIT
PIN CONFIGUTION
