Silicon Germanium Low Noise Amplifier for LTE,SGM13006H1 Replace BGA7H1N6.
SGM13006H1.pdf優勢替代
FEATURES
? Insertion power gain: 12.5 dB
? Low noise figure: 0.60 dB
? Low current consumption: 4.7 mA
? Operating frequencies: 2300 - 2690 MHz
? Supply voltage: 1.5 V to 3.3 V
? Digital on/off switch (1V logic high level)
? Ultra small TSNP-6-2 leadless package
(footprint: 0.7 x 1.1 mm2)
? B7HF Silicon Germanium technology
? RF output internally matched to 50 Ω
? Only 1 external SMD component necessary
? 2kV HBM ESD protection (including AI-pin)
? Pb-free (RoHS compliant) package
PIN CONFIGUTION
